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BD136 Transistor
30 maart 2023
BD140 Transistor
30 maart 2023

BD139 Transistor

0.95

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SKU: 08502 Categorie:
Beschrijving

BD139 Transistor
Type Designator: BD139

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 12 W

Maximum Collector-Base Voltage
Vcb
: 80 V

Maximum Collector-Emitter Voltage
Vce
: 80 V

Maximum Emitter-Base Voltage
Veb
: 5 V

Maximum Collector Current
Ic max
: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 50 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: –

Package: TO126
BD139 Transistor

  • Type Designator: BD139

  • Material of Transistor: Si

  • Polarity: NPN

  • Maximum Collector Power Dissipation (Pc): 12 W

  • Maximum Collector-Base Voltage |Vcb|: 80 V

  • Maximum Collector-Emitter Voltage |Vce|: 80 V

  • Maximum Emitter-Base Voltage |Veb|: 5 V

  • Maximum Collector Current |Ic max|: 1 A

  • Max. Operating Junction Temperature (Tj): 150 °C

  • Transition Frequency (ft): 50 MHz

  • Forward Current Transfer Ratio (hFE), MIN: 40

  • Noise Figure, dB: –

  • Package: TO126
Merk
Extra informatie
Gewicht 0.500 kg
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