Transistor BD115

Transistor BD115

ype Designator: BD115

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 6

Maximum collector-base voltage
Ucb
, V: 245

Maximum collector-emitter voltage
Uce
, V: 180

Maximum emitter-base voltage
Ueb
, V: 5

Maximum collector current
Ic max
, A: 0.15

Maksimalna temperatura (Tj), °C: 200

Transition frequency (ft), MHz: 80

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 22

Noise Figure, dB: –

Package of BD115 transistor: TO39Transistor BD115

• ype Designator: BD115

• Material of transistor: Si

• Polarity: NPN

• Maximum collector power dissipation (Pc), W: 6

• Maximum collector-base voltage |Ucb|, V: 245

• Maximum collector-emitter voltage |Uce|, V: 180

• Maximum emitter-base voltage |Ueb|, V: 5

• Maximum collector current |Ic max|, A: 0.15

• Maksimalna temperatura (Tj), °C: 200

• Transition frequency (ft), MHz: 80

• Forward current transfer ratio (hFE), min: 22

• Noise Figure, dB: –

• Package of BD115 transistor: TO39